Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
نویسندگان
چکیده
Catalyst-free InGaAs nanowires are promising building blocks for optoelectronic devices operating at telecommunication wavelengths. Despite progress, the applications of remain limited due to their high density surface states that degrade optical properties. Here, with superior properties achieved by effectively suppressing an InP passivation shell. Optimal shell growth conditions and thickness maximize minority carrier lifetime identified. The photoluminescence intensity these passivated is up three orders magnitude higher than bare counterparts. Moreover, a long ?13 ns measured room temperature. emission wavelength 1530 nm results in ultra-low recombination velocity ?280 cm s?1. In addition shell, crystal structure plays important role luminescence intensity. Combined cathodoluminescence mapping high-resolution transmission electron microscopy along reveal significantly lower intensities wurtzite predominant sections zinc blende ones.These insights on optimal provide directions engineering high-performance nanoscale-devices wavelength.
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ژورنال
عنوان ژورنال: Advanced Optical Materials
سال: 2022
ISSN: ['2195-1071']
DOI: https://doi.org/10.1002/adom.202200739